Diodes 2A611A tuning, silicon, mesaepitaxial, diffusion.
Designed for use in devices for frequency or phase tuning in the microwave range.
They are produced in a cermet-like casing of the KD-104 type with rigid terminals and in a die-free design in the form of a crystal with contact pads without a chip holder.
Open-frame diodes are designed for use in hybrid integrated circuits that provide sealing and protection devices from moisture, salt fog, mold fungi, hoarfrost and dew, low and high blood pressure.
The type of diode is shown on the group container.
The weight of the body diode is not more than 0.1 g, the case-free diode is 0.0001 g.
The main technical parameters of the microwave diode 2A611A:
• Constant reverse voltage: not more than 50 V,
• Continuous dissipated microwave power: no more than 100 mW,
• Permissible static potential value: 200 V,
• Capacity of the case: no more than 4.7 pF,
• Diode inductance: not more than 1 nH,
• Ambient temperature: -60 ... 125 ° С,
• Minimum operating time: 25,000 h,