1 Stück G20N60B3D IGBT IGBT Transistor 40A/600V N-Channel TO-247 Hyperfast Diode
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor: 165W
Maximum collector-emitter voltage (Uce): 600V
Collector-emitter saturation voltage (Ucesat): 2V
Maximum collector-gate voltage (Ucg): 600V
Maximum gate-emitter voltage (Ueg): 20V
Maximum collector current (Ic): 40A
Maximum junction temperature (Tj): 150°C
Rise time or frequency switching: 25/220nS
(20N60A3D,G20N60A3D)
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