AOP605 Complementary Enhancement Mode Field Effect Transistor
By Alpha Omega Semiconductor


The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications).

DATASHEET

FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A, 6.6A
Rds On (Max) @ Id, Vgs28 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) @ Vgs16.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds820pF @ 15V
Power - Max2.5W
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-PDIP
Other Names785-1140-2


TERMS OF SALE

We welcome FPO/APO/Military Orders.  APO/FPO ships at domestic rates.
New Bidders, International bidders welcome - we are flexible on customs declarations.

Any questions eoi at lunaticlabs.biz 


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