KHX1600C9D3P1K2/8G 8GB (4GB 512M x 64-Bit x 2 pcs.) DDR3-1600 CL9 240-Pin DIMM Kit Supports Kingston HyperX Plug and Play (PnP)

 

SPECIFICATIONS

CL(IDD) 9 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 33.75ns (min.) Power (Operating) TBD* (per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C *Power will vary depending on the SDRAM used.

 

FEATURES • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 • Posted CAS • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • Programmable CAS Write Latency(CWL) = 8 (DDR3-1600) • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB : Height 1.180” (30.00mm), single  sided  component