1 x ON Semiconductor FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247
Product Details
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
SpecificationsAttribute Value Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V Maximum Power Dissipation 349 W Package Type TO-247 Mounting Type Through Hole Channel Type N Pin Count 3 Transistor Configuration Single Dimensions 15.6 x 4.7 x 20.6mm
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
- FREE UK DELIVERY ON ALL ITEMS
- HIGH QUALITY ITEMS
- FRIENDLY, HELPFUL CUSTOMER SERVICES
