Si photodiode, S1226-8BQ, For UV to visible, precision photometry; suppressed near IR sensitivity.
Specifications
| Photosensitive area | 5.8 × 5.8 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package category | TO-8 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 5 V |
| Spectral response range | 190 to 1000 nm |
| Peak sensitivity wavelength (typ.) | 720 nm |
| Photosensitivity (typ.) | 0.36 A/W |
| Dark current (max.) | 20 pA |
| Rise time (typ.) | 2 μs |
| Terminal capacitance (typ.) | 1200 pF |
| Noise equivalent power (typ.) | 5×10-15 W/Hz1/2 |
| Measurement condition | Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted |
Spectral response
Related documents
Selection guide / Si photodiodes [6.7 MB/PDF]
For more information, please visit the following website:
https://www.hamamatsu.com/us/en/product/optical-sensors/photodiodes/si-photodiodes/S1226-8BQ.html