Packaging: Cut Tape (CT) Alternate Packaging
Series: HEXFET®
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 22mOhm @ 44A 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB


IRFS4127TRLPBF