MOSFET P-CH 60V 80A TO-263Packaging: Cut Tape (CT) Alternate Packaging Series: SIPMOS® Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On Min Rds On): 10V Rds On (Max) @ Id Vgs: 23mOhm @ 64A 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V FET Feature: - Power Dissipation (Max): 340W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB SPB80P06PGATMA1
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