Packaging: Cut Tape (CT) Alternate Packaging
Series: SIPMOS®
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 23mOhm @ 64A 10V
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB


SPB80P06PGATMA1