MOSFET N-CH 100V 192A TO-220ABPackaging: Tube Series: HEXFET® StrongIRFET™ Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Drive Voltage (Max Rds On Min Rds On): 10V Rds On (Max) @ Id Vgs: 4.2mOhm @ 115A 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 50V FET Feature: - Power Dissipation (Max): 441W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 IRF100B201
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