Packaging: Tube
Series: -
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA