IRFR/U9024N - HEXFET® Power MOSFET6/26/97Parameter:
Typ.Max. UnitsRθJCJunction-to-Case ––– 3.3RθJA
Junction-to-Ambient (PCB mount)** ––– 50 °C/WRθJA
Junction-to-Ambient ––– 110
Thermal Resistance D -PakTO-252AA I-PakTO-251AAl
Ultra Low On-Resistance
lP-ChannellSurface Mount (IRFR9024N)l
Straight Lead (IRFU9024N)l
Advanced Process Technologyl
Fast Switchingl
Fully Avalanche RatedDescriptionParameter Max. UnitsID @ TC = 25°C
Continuous Drain Current, VGS @ -10V -11ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V -8 AIDM
Pulsed Drain Current Å-44PD @TC = 25°C
Power Dissipation 38 WLinear Derating Factor0.30W/°CVGS
Gate-to-Source Voltage ± 20 VEAS
Single Pulse Avalanche EnergyÇ62 mJIAR
Avalanche CurrentÅ-6.6 AEAR
Repetitive Avalanche EnergyÅ3.8 mJdv/dt Peak Diode Recovery dv/dt É-10 V/nsTJ
Operating Junction and -55 to + 150TSTG
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.The D-Pak is designed for surface mounting usingvapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels