MOSFET N-CH 150V 100A TO263-3Packaging: Cut Tape (CT) Alternate Packaging Series: OptiMOS™ Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On Min Rds On): 8V 10V Rds On (Max) @ Id Vgs: 7.2mOhm @ 100A 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5470pF @ 75V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB IPB072N15N3GATMA1
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