2N5004
Material of transistor: Si     Polarity: NPN
Maximum collector power dissipation (Pc), W: 33
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 60
Forward current transfer ratio (hFE), min: 70
Package: TO59