2N2658 Si NPN Power BJT 80V 7W TO-5

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 7

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Package of 2N2658 transistor: TO5