2N2658 Si NPN Power BJT 80V 7W TO-5
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 7
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 20
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 15
Package of 2N2658 transistor: TO5