2N5676 Si PNP Power Transistor 125V 2A
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 2
Maximum collector-base voltage |Ucb|, V: 125
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 2
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 80
Forward current transfer ratio (hFE), min: 50
Package of 2N5676 transistor: TO66