2N5676 Si PNP Power Transistor 125V 2A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 125

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 80

Forward current transfer ratio (hFE), min: 50

Package of 2N5676 transistor: TO66