Part No. ： TQP7M9101
Description ： 400 - 4200 MHz
Description ： 400 - 4200 MHz
0.25 Watt High Linearity Amplifier
Applications
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
400-4200 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
400-4200 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
The TQP7M9101 is a high-linearity driver amplifier in a
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescent
current. All devices are 100% RF and DC tested.
The TQP7M9101 incorporates on-chip features that
differentiate it from other products in the market. The RF
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific
frequency bands making the component easy for design
engineers to implement in their systems. The amplifier
integrates an on-chip DC over-voltage and RF over-drive
protection. This protects the amplifier from electrical DC
voltage surges and high input RF input power levels that
may occur in a system. On-chip ESD protection allows
the amplifier to have a very robust Class 2 HBM ESD
rating.
The TQP7M9101 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescent
current. All devices are 100% RF and DC tested.
The TQP7M9101 incorporates on-chip features that
differentiate it from other products in the market. The RF
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific
frequency bands making the component easy for design
engineers to implement in their systems. The amplifier
integrates an on-chip DC over-voltage and RF over-drive
protection. This protects the amplifier from electrical DC
voltage surges and high input RF input power levels that
may occur in a system. On-chip ESD protection allows
the amplifier to have a very robust Class 2 HBM ESD
rating.
The TQP7M9101 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Maker ：TRIQUINT [TriQuint Semiconductor]
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