Part No.  :  AFT09MS015NT1


Download : High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
136–941 MHz, 16 W, 12.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR

Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.

Features
 Characterized for Operation from 136 to 941 MHz
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Integrated ESD Protection
 Integrated Stability Enhancements
 Wideband — Full Power Across the Band
 Exceptional Thermal Performance
 Extreme Ruggedness
 High Linearity for: TETRA, SSB
 In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
 Output or Driver Stage VHF Band Mobile Radio
 Output or Driver Stage UHF Band Mobile Radio
 Output or Driver Stage for 700--800 MHz Mobile Radio
                   

Maker ：Freescale



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