Part No. : AFT09MS015NT1
Download : High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
136–941 MHz, 16 W, 12.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.
Features
Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
Output or Driver Stage VHF Band Mobile Radio
Output or Driver Stage UHF Band Mobile Radio
Output or Driver Stage for 700--800 MHz Mobile Radio
Maker :Freescale
Payment
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All the products we are selling include factory warranty, don?t cover items that have been abused, burned and damaged in any form.Please contact us via eBay Message if you have NOT received item in 30 days, we will check it with post office, and then resend or refund any missing item.In the unlikely event that your product is faulty in anyway, you must contact us ASAP and then return it within 7 days of receipt. The postage and packing fee will NOT be refunded.We will not be responsible for the delivery or insurance charges incurred in returning item back to us.If you return an item purchased from us, it must be back in Factory Condition. This includes packaging, inserts, manuals etc. please allow us to 5 Working Days for us to process your returned item.About us
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