This is a pallet with RF Power Field Effect Transistor
And if you wish I can offer you at extra cost a modify kit for the critical parts as the ATC capacitors, ... .

 General description :
The MRF6VP11KHR6 and MRF6VP11KGSR5 are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.

Features:
Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.),
Pulse Width = 100 µsec, Duty Cycle = 20%
Power Gain: 26 dB
Drain Efficiency: 71%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large-Signal
mpedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.

NOTE: PARTS ARE PUSH–PULL

Key Parametrics :
Frequency (Min) (MHz)              1.8
Frequency (Max) (MHz)            150
Supply Voltage (Typ) (V)            50
P1dB (Typ) (dBm)                      60
P1dB (Typ) (W)                       1000
Output Power (Typ) (W) @ Intermodulation Level at Test Signal  1000.0 @ Peak







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