Part No.  :     MRF18060A    MRF18060ALR3

 Description  :  
RF Power Field Effect Transistors

  N-Channel Enhancement-Mode Lateral MOSFETs

                         1805-1880MHz , 60W ,  26V
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN -PCS/cellular radio and WLL
applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz)
Power Gain ó 13 dB @ 60 Watts
Efficiency ó 45% @ 60 Watts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

Maker:  MOTOROLA [Motorola, Inc]





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