Part No. ：MRF8P29300H

 
 Description：   RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power transistors designed for applications operating at frequencies
between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Maker：FREESCALE [Freescale Semiconductor, Inc]  
                    
                                                                                 
     




 


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