Specifications

	Category	Power MOSFET
	Channel Mode	Enhancement
	Channel Type	P
	Configuration	Single
	Height	8.77mm
	Maximum Continuous Drain Current	23 A
	Maximum Drain Source Resistance	0.117 Ω
	Maximum Drain Source Voltage	100 V
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+175 °C
	Maximum Power Dissipation	140 W
	Minimum Operating Temperature	-55 °C
	Mounting Type	Through Hole
	Number of Elements per Chip	1
	Package Type	TO-220AB
	Pin Count	3
	Typical Gate Charge @ Vgs	97 nC V @ 10
	Typical Input Capacitance @ Vds	1300 pF V @ 25
	Typical Turn-Off Delay Time	51 ns
	Typical Turn-On Delay Time	15 ns