Part No. : MRF9120 MRF9120R3
Description : RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
120 W , 880MHz ，26V
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power ó 26 Watts Power Gain ó 16 dB Efficiency ó 26% Adjacent Channel Power ó 750 kHz: -45 dBc @ 30 kHz BW 1.98 MHz: -60 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
- Maker：MOTOROLA [Motorola, Inc]
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