Part No. :   ART2K0FE 

Description: 
Power LDMOS transistor

  1.1 General description
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistorhas been designed to cover a wide range of applications for ISM, broadcast andcommunications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

1.2 Features and benefits
 High breakdown voltage enables class E operation up to VDS =53V
 Qualified up to a maximum of VDS =65V
 Characterized from 30 V to 65 V to support a wide range of applications
 Integrated dual sided ESD protection enables class C operation and complete switchoff of the transistor
 Excellent ruggedness with no device degradation
 High efficiency
 Excellent thermal stability
 Designed for broadband operation
 For RoHS compliance see the product details on the Ampleon website

1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications  
                 


Maker:AMPLEON


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