PMD10K80 DARLINGTON TRANSISTOR NPN 80V 12A TO3

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 150

Forward current transfer ratio (hFE), min: 10000

Package of PMD10K80 transistor: TO3

MFR: BSC

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