MOSFET N-CH TO263-3Packaging: Cut Tape (CT) Alternate Packaging Series: CoolMOS™ P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On Min Rds On): 10V Rds On (Max) @ Id Vgs: 60mOhm @ 15.9A 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V FET Feature: - Power Dissipation (Max): 164W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB IPB60R060P7ATMA1
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