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CAS325M12HM21.2kV, 3.6 mΩ All-Silicon Carbide
High Performance, Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
Features
• Ultra Low Loss, Low (5 nH) Inductance
• Ultra-Fast Switching Operation
• Zero Reverse Recovery Current from Diode
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• AlSiC Baseplate and Si3N4 AMB Substrate
• Ease of Paralleling
• High Temperature Packaging, TJ(max) = 175 °C
• AS9100 / ISO9001 Certified Manufacturing
System Benefits
• Enables Compact, Lightweight Systems
• High Efficiency Operation
• Reduced Thermal Requirements
Applications
• High-Efficiency Converters / Inverters
• Motor & Traction Drives
• Smart-Grid / Grid-Tied Distributed Generation