Description: Product Category: |
MOSFET |
| Manufacturer: | Infineon |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 290 A |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Vgs - Gate-Source Voltage: | 20 V |
| Qg - Gate Charge: | 360 nC |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Configuration: | Single Dual Drain |
| Height: | 20.7 mm |
| Length: | 15.87 mm |
| Pd - Power Dissipation: | 520 W |