Specifications Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Voltage	650 V
Maximum Drain Source Resistance	0.19 Ω
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Gate Source Voltage	±20 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Channel Mode	Enhancement
Category	Power MOSFET
Maximum Power Dissipation	208 W
Minimum Operating Temperature	-55 °C
Typical Turn-On Delay Time	10 ns
Transistor Material	Si
Number of Elements per Chip	1
Width	5.3mm
Dimensions	15.9 x 5.3 x 20.95mm
Length	15.9mm
Maximum Operating Temperature	+150 °C