Type Designator: 2SJ119
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 160 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO3P
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OFFICE 1FAL 5-2
1F OFFICE 1FB 1-2 (4)
OFFICE 5E5R 2-4 BOX2
※We have specialized in audio and electronic components business for over 30 years. All of the goods are located in Taiwan, and we will deliver goods via Taiwanese post office(ChungHwa Post) in order to save cost of shipment for our worldwide customers, therefore you may receive products about 8-30 days, thanks in advance for your patience. If there is any question, please inform us, we will answer for you ASAP. Thank you.
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