1T308V

Transistors 1t308v germanium diffusion-alloy PnP universal design.
Designed for use in generators, power amplifiers, switching devices.
Available in metal glass housing with flexible terminals.
The type of device is shown on the case.
Transistor weight is not more than 2.2 g.
Specifications: ЖК3.365.120 THOSE.

Main technical characteristics of the transistor 1Т30:
* Structure: PNP
* RC Max - constant power dissipation collector: 150 mW;
• Fгр - current Limit gain frequency of the transistor circuits for common-emitter and common-base: not less than 120 MHz;
• Ikbo - breakdown Voltage collector-base for a given reverse collector current and open-circuit emitter: 20;
• Uэбо - breakdown Voltage emitter-base for a given reverse current of the emitter and collector open circuit: 3;
• IK max - maximum permissible DC collector current: 50 m;
* Ikbo-collector Reverse current-collector current through the junction for a given collector-base reverse voltage and open emitter output: less than 5µa;
* H21e-Static current transfer coefficient for common-emitter circuit in large-signal mode: 80 ... 150 (1V; 10 mA);
* SC-header transfer capacity: not more than 8 (5V);