Avalanche Energy Rating (Eas) |
150.0
mJ
|
Case Connection |
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
49.0
A
|
Drain-source On Resistance-Max |
0.0175
ohm
|
DS Breakdown Voltage-Min |
55.0
V
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
Number of Elements |
1.0
|
Number of Terminals |
3
|
Operating Mode |
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
160.0
A
|
Qualification Status |
Not Qualified
|
Surface Mount |
NO
|
Terminal Form |
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
Transistor Element Material |
SILICON
|
Additional Feature |
AVALANCHE RATED |