FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V
Current - Continuous Drain (Id) @ 25°C - 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 19 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 670 pF @ 25 V
Power Dissipation (Max) - 33W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Please Note: Due to continued product development, specifications are subject to change without prior notice
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