Part
Status
|
Active
|
FET Type
|
P-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to
Source Voltage (Vdss)
|
200V
|
Current
- Continuous Drain (Id) @ 25°C
|
11A (Tc)
|
Drive
Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On
(Max) @ Id, Vgs
|
500mOhm @ 6.6A, 10V
|
Vgs(th) (Max)
@ Id
|
4V @ 250µA
|
Gate
Charge (Qg) (Max) @ Vgs
|
44nC @ 10V
|
Vgs
(Max)
|
±20V
|
Input
Capacitance (Ciss) (Max) @ Vds
|
1200pF @ 25V
|
Power
Dissipation (Max)
|
125W (Tc)
|
Operating
Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting
Type
|
Through Hole
|
Package
/ Case
|
TO-220-3
|
|
|