Radian RMS-200/8G PCIe NVMe I/O Accelerator for ZFS slog or cache

This device is a DDR3 DRAM based NVRAM device. The NVRAM controller presents as a block device via NVMe PCIe 3.0 x8 interface. The DDR3 data is protected by ultra-capacitors that will write the data content to NAND flash upon power loss. You basically get DDR3 performance as a 8GB block storage device that has power loss protection! Great for use as a ZFS slog device, or for I/O acceleration applications.

Performance:

Write Throughput: 5 GB/s
Random 4K Write IOPS: 900K

Read Throughput: 5.2 GB/s
Random 4K Read IOPS: 1 Mil. 
Capacity: 8GB

Specifications:

DRAM ECC: 64-bit data/8-bit ECC code detects double bit errors and corrects single bit errors

with error injection test function.

NAND Flash: Fault Tolerant architecture with up to 32GB of SLC NAND Flash for storing data on

system/power failure and ensuring data integrity

NVMe DMA Engines: Supports NVMe command set, submission/completion queues, and MSI-X

vector interrupts

Ultracapacitor Recharge Time: 57 Seconds

Power Requirement (+12V Rail) Typical Maximum: 15.5W @ 55°C