FET Type - P-Channel

Technology - MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) - 500 V

Current - Continuous Drain (Id) @ 25°C - 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On) - 10V

Rds On (Max) @ Id, Vgs - 4.9Ohm @ 1.35A, 10V

Vgs(th) (Max) @ Id - 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs - 23 nC @ 10 V

Vgs (Max) - ±30V

Input Capacitance (Ciss) (Max) @ Vds - 660 pF @ 25 V

Power Dissipation (Max) - 85W (Tc)

Operating Temperature - -55°C ~ 150°C (TJ)

Mounting Type - Through Hole