* A new generation MOS dynamic random access memory circuit in a 16-Lead DIP type package organized as 16,384 x 1-bit and incorporates advanced circuit techniques designed to provide wide operating margins, both internally and to the system user, while achieving higher performance levels in both speed and power.
* Fast Access Time: 200ns, 375ns cycle
* Maximum Input Voltage: 20V or 15V
* Average Power Supply Operating Current Max: 35mA
* Maximum Power Disipation: 1W
* Equal to NTE2117
* Sold as 1 piece per lot
We offer shipping discounts on combined purchases for eligible items. Use the "Add to cart" button instead of "Buy It Now". When done, click on the cart icon in the upper right corner of the screen to view your selections. Click on "Request total from seller" and you'll soon receive a revised eBay invoice from us with a combined shipping discount, when available. Other shipping Options available, we will gladly combine multiple orders. Contact us with any questions.
Please note that we have locations in Ohio and Pennsylvania and are required to charge sales tax in both states; if you live in one of these states, please wait for us to send you an invoice.
International Buyers: Import duties, taxes, and charges are not included in the item price or shipping cost. These charges are the buyer's responsibility. Please check with your country's customs office to determine what these additional costs will be prior to bidding or buying Payment is expected within 3 days. Thanks for looking!
Please note that we have locations in Ohio and Pennsylvania and are required to charge sales tax in both states; if you live in one of these states, please wait for us to send you an invoice.
International Buyers: Import duties, taxes, and charges are not included in the item price or shipping cost. These charges are the buyer's responsibility. Please check with your country's customs office to determine what these additional costs will be prior to bidding or buying Payment is expected within 3 days. Thanks for looking!
