IR IRG4PC40KDPBF IGBT N-Ch 600V 42A 160W TO247AC

This product data sheet is originally written in English.


IRG4PC40KDPbF IGBT N-Ch 600V 42A 160W TO247AC

 

RS Components Part # 543-0254

 

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features

 

 

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

 

Supplied in original sealed RS packet

Our REF# 915 - B26A

Combined Postage

I will combine postage where several different items are purchased at the same time.

If you purchase more than one product please add it to your basket (if possible) and then request a total for your combined purchases. (I believe this only works on ebay.co.uk desktop website and not on mobile devices or some other country websites). I will then send you a total with just the one postage charge. If you cannot follow this process then I will refund the excess postage when I process the order.

In most cases you can order as many of a single item as you want for the same postage as buying one, and combine other items within this single charge. For some heavier items such as transformers, there may be an additional postage charge for the second and subsequent items. Please feel free to contact us if you have any queries

International Postage

We are usually happy to ship items throughout Europe and N America.

Orders placed by 1pm Mon - Fri will usually be shipped the same day but this is not guaranteed.

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. If you purchase more than one product please add it to your basket (if possible) and then request a total for your combined purchases. (I believe this only works on ebay.co.uk desktop website and not on mobile devices or some other country websites). I will then send you a total with just the one postage charge. If you cannot follow this process then I will refund the excess postage
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. If you purchase more than one product please add it to your basket (if possible) and then request a total for your combined purchases. (I believe this only works on ebay.co.uk desktop website and not on mobile devices or some other country websites). I will then send you a total with just the one postage charge. If you cannot follow this process then I will refund the excess postage
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. If you purchase more than one product please add it to your basket (if possible) and then request a total for your combined purchases. (I believe this only works on ebay.co.uk desktop website and not on mobile devices or some other country websites). I will then send you a total with just the one postage charge. If you cannot follow this process then I will refund the excess postage
Collector-Emitter/Drain-Source Voltage 600V
Transistor Category Power Transistor
Unit Type Unit
MPN IRG4PC40KDPBF
Unit Quantity 1
Brand International Rectifier
Maximum Power Dissipation 160 W
Mounting Style PCB Mount
Power Dissipation 160W
Number of Pins 3
Number of Elements per Chip 1
Transistor Type IGBT
Continuous Collector/Drain Current 42A
EAN Does not apply
Type IGBT
Package/Case TO-247