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lot 25 pcs

KT801A
Transistors KT801A silicon alloy-diffusion structures npn switching.
Designed for use in vertical and line scanning, secondary power supplies.
Are used for work in radio engineering and electronic devices of general purpose.
Are issued in the glass-to-metal case with flexible conclusions.
They are marked with an alphanumeric code on the transistor case.
Hull type: KTYU-3-9.
The mass of the transistor is not more than 4.0 g.
Climatic version: "UHL", placement category "2.1".
Quality category: "OTK".
Specifications:
- acceptance "1" SCHY3.365.001TU.
The minimum shelf life is 12 years from the date of acceptance, and in the case of re-checking the product - from the date of re-checking.
Import analog: BSX63, 2N2890, 2N2891, 2N4237, 2N4239, 2SN4150.

Main technical characteristics of the KT801A transistor:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 10 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V (0.1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V;
• Ik max - Maximum allowable DC collector current: 2 A;
• Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 10 mA (80V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 13... 50;
• Rke us - Saturation resistance between collector and emitter: no more than 2.5 Ohm

Technical characteristics of transistors KT801A, KT801B:

transistor type	Structure	Limit values of parameters at Тp=25°С						Parameter values at Тp=25°С								T P max	Tmax _
		I K max	I K.I. max	U KE R max	U KB 0 max	U EB 0 max	P K max	h21Э	U ke us.	I KBO	I EBO	f gr.	K W	S K	S E	T P max	Tmax _
		A	A	IN	IN	IN	Tue		IN	mA	mA	MHz	dB	pF	pF	°С	°С
KT801A	npn	2	-	80	-	2.5	5	13…50	2	-	2	10	-	-	-	150	-60…+85
KT801B	npn	2	-	60	-	2.5	5	30…150	2	-	2	10	-	-	-	150	-60…+85

Symbols of the electrical parameters of transistors:
• I K max - the maximum allowable direct current of the transistor collector.
• I K. I. max - the maximum allowable impulse current of the transistor collector.
• UKE R max - the maximum voltage between the collector and the emitter for a given collector current and resistance in the base-emitter circuit.
• U KE 0 max - the maximum voltage between the collector and emitter of the transistor at a given collector current and base current equal to zero.
• U KB 0 maxis the maximum collector-base voltage at a given collector current and emitter current equal to zero.
• U EB 0 max - the maximum allowable constant voltage emitter-base at a collector current equal to zero.
• P K max - the maximum allowable constant power dissipated in the collector of the transistor.
• PKT max - the maximum allowable constant power dissipated on the collector of the transistor with a heat sink .
• h21E - static current transfer coefficient of the bipolar transistor.
• U ke us.- saturation voltage between the collector and emitter of the transistor.
• I KBO - collector reverse current. Current through the collector junction for a given collector-base reverse voltage and an open emitter terminal.
• I EBO - emitter reverse current. Current through the emitter junction for a given emitter-base reverse voltage and an open collector terminal.
• fgr - cutoff frequency of the current transfer coefficient.
• КШ - noise figure of the transistor.
• C K - collector junction capacitance.
• C E - capacitance of the collector junction.
•T P max - the maximum allowable transition temperature.
• T max - the maximum allowable ambient temperature.