P-Channel Enhancement Mode SIPMOS Small-Signal Transistor KT507A

OptiMOS™, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in  telecom andserver power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives andadapters.

Similar to BSS315

Drain-source breakdown voltage       -50V
Gate to Source Voltage                       10V
Continuous Drain Curren                   -1.1A
Pulsed Drain Curent                    -4.4A
Maximum power dissipation             1.0W
Gate leakage current                      -0.1μA
The threshold gate voltage          -0.8...2V
Drain-source resistance (open)  0.8 Ohm
Forward transconductance                 2.7
Input capacity                                400 pF
Output capacity                              230 pF