Fuji 6MBI100S-120-50, M626, Hex (3 x Dual) IGBT Module, 150 A max, 1200 V, Screw Mount
- BMUK Part # :-462-934
- BrandFuji
- Mfr. Part No.6MBI100S-120-50
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Product Details
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Configuration | Emitter-Collector, Hex (3 x Dual) | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Channel Type | N | |
| Mounting Type | Screw Mount | |
| Package Type | M626 | |
| Pin Count | 21 | |
| Maximum Power Dissipation | 700 W | |
| Dimensions | 122 x 62 x 17mm | |
| Height | 17mm | |
| Length | 122mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 62mm |
For a Specification PDF Please CLICK HERE
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