This listing is for ONE MOSFET Transistor

N-Channel Power MOSFET over 100A, International Rectifier

International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Category	Power MOSFET
	Channel Mode	Enhancement
	Channel Type	N
	Configuration	Single
	Dimensions	15.9 x 5.3 x 20.3mm
	Height	20.3mm
	Length	15.9mm
	Maximum Continuous Drain Current	110 A
	Maximum Drain Source Resistance	0.008 Ω
	Maximum Drain Source Voltage	55 V
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+175 °C
	Maximum Power Dissipation	200 W
	Minimum Operating Temperature	-55 °C
	Mounting Type	Through Hole
	Number of Elements per Chip	1
	Package Type	TO-247AC
	Pin Count	3
	Typical Gate Charge @ Vgs	170 nC V @ 10
	Typical Input Capacitance @ Vds	4000 pF V @ 25
	Typical Turn-Off Delay Time	43 ns
	Typical Turn-On Delay Time	14 ns
	Width	5.3mm

For a Specification PDF Please CLICK HERE

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