Fairchild FGH75N60UFTU N-channel IGBT Transistor, 150 A 600 V, 3-Pin TO-247
You will get 1 Transistor
- Brand Fairchild Semiconductor
- Mfr. Part No. FGH75N60UFTU
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Product Details
IGBT Discretes, Fairchild Semiconductor
IGBT Discretes
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as
You will get 1 Transistor
| |
Product Details
IGBT Discretes, Fairchild Semiconductor
IGBT Discretes
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
| Channel Type | N | |
| Configuration | Single | |
| Dimensions | 15.6 x 4.7 x 20.6mm | |
| Height | 20.6mm | |
| Length | 15.6mm | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 452 W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Width | 4.7mm |
Specification PDF Please CLICK HERE
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