FET Type N-Channel

Technology GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss) 80V

Current - Continuous Drain (Id) @ 25°C 60A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 5V

Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V

Vgs(th) (Max) @ Id 2.5V @ 14mA

Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V

Vgs (Max) +6V, -4V

Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V

FET Feature -

Power Dissipation (Max) -

Operating Temperature -40°C ~ 150°C (TJ)

Mounting Type Surface Mount