Manufacturer: Cree, Inc. 
Product Category: MOSFET 
Technology: SiC 
Mounting Style: Through Hole 
Package/Case: TO-247-3 
Number of Channels: 1 Channel 
Transistor Polarity: N-Channel 
Vds - Drain-Source Breakdown Voltage: 1200 V 
Id - Continuous Drain Current: 42 A 
Rds On - Drain-Source Resistance: 80 mOhms 
Vgs th - Gate-Source Threshold Voltage: 2.5 V 
Vgs - Gate-Source Voltage: 25 V 
Qg - Gate Charge: 90.8 nC 
Minimum Operating Temperature: - 55 C 
Maximum Operating Temperature: + 135 C 
Configuration: Single 
Pd - Power Dissipation: 150 W 
Channel Mode: Enhancement 
Transistor Type: 1 N-Channel  
Brand: Wolfspeed / Cree  
Forward Transconductance - Min: 7.3 S, 6.8 S  
Fall Time: 24 ns  
Product Type: MOSFET  
Rise Time: 38 ns  
Subcategory: MOSFETs  
Typical Turn-Off Delay Time: 40 ns  
Typical Turn-On Delay Time: 13 ns