2SB1647
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Emitter Voltage 'Vce': 150 V
Maximum Emitter-Base Voltage 'Veb': 5 V
Maximum Collector Current 'Ic max': 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 10000

2SD2560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage 'Vcb': 150 V
Maximum Collector-Emitter Voltage 'Vce': 150 V
Maximum Emitter-Base Voltage 'Veb': 5 V
Maximum Collector Current 'Ic max': 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 5000

Package Included:
2SD2560 + 2SB1647 D2560 B1647 Pair Transistors NPN PNP 15A 150V 130W