Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage 'Vds': 100 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Drain Current 'Id': 180 A
Total Gate Charge (Qg): 150 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package Included:
10PCS IRFB4110 IRF4110 Power MOSFET Transistor TO-220 100V 180A IRFP4110PbF