FEATURES

Dynamic dV/dt Rating 

Repetitive Avalanche Rated 

175 °C Operating Temperature 

Fast Switching 

Ease of Paralleling 

Simple Drive Requirements 

Compliant to RoHS Directive 2002/95/EC

9.2A, 100V 

rDS(ON) = 0.270Ω

SOA is Power Dissipation Limited 

Single Pulse Avalanche Energy Rated 

Nanosecond Switching Speeds 

Linear Transfer Characteristics 

High Input Impedance

DESCRIPTION

Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Package Included

10pcs IRF520N TO-220 N-Channel IR Power MOSFET Transistor