MDI200-12A4 IXYS Single IGBT Module, 270A 1200V, 7-Pin Y3 DCB Panel Mount
You will get ONE IGBT
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Features:
- NPT IGBT technology
- low saturation voltage
- low switching losses
- switching frequency up to 30 kHz
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for easy parallelling
- MOS ...
MDI200-12A4 IXYS Single IGBT Module, 270A 1200V, 7-Pin Y3 DCB Panel Mount
You will get ONE IGBT
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Features:
- NPT IGBT technology
- low saturation voltage
- low switching losses
- switching frequency up to 30 kHz
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for easy parallelling
- MOS input, voltage controlled
- ultra fast free wheeling diodes
- package with DCB ceramic base plate
- isolation voltage 4800 V
- UL registered E72873
Typical Applications:
- AC and DC motor control
- AC servo and robot drives
- power supplies
- welding inverters
Specifications:
