| FET Type | P-Channel | |
|---|---|---|
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 50V | |
| Current - Continuous Drain (Id) @ 25°C | 175mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 625mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | E-Line (TO-92 compatible) |