Description: |
|
Type Designator: |
BFR90A |
Material of transistor: |
Si |
Polarity: |
NPN |
Maximum collector power dissipation (Pc): |
300mW |
Maximum collector-base voltage (Ucb): |
20V |
Maximum collector-emitter voltage (Uce): |
15V |
Maximum emitter-base voltage (Ueb): |
2V |
Maximum collector current (Ic max): |
30mA |
Maximum junction temperature (Tj): |
150°C |
Transition frequency (ft): |
6GHz |
Collector capacitance (Cc), Pf: |
0.3 |
Forward current transfer ratio (hFE), min/max: |
- |
Manufacturer of BC109C transistor: |
Philips |
Package of BC109C transistor: |
SOT-37 |
Application: |
Low Noise, RF Transistor |